IMAGING

Current technologies for infrared imaging are very expensive. Sensing material are based on InGaAs (Shortwave), MCT/InSb (Midwave) and ASi/VOx (Longwave).  Our expertise is in the design of imaging systems that can provide viable alternatives. Two of the core technologies that we specialise in are Graphene and engineered T2SL based detectors.

We have expertise in Mixed Signal Integrated Circuits, SiC Power Devices, Microelectromechanical Systems (MEMS), MMW, III-V [GaAs, InP, GaN, InAs] devices.

We have also worked on a variety of CMOS Read Out Integrated Circuits (ROICs) and provide off-the-shelf and/or custom solutions for different imaging applications.

The ROICs we work with use standard CMOS technologies and can be hybridized with detector arrays with cutoff wavelengths of visible (0.35-1.05µm), Near IR (0.9-1.8µm), SWIR (0.9-2.5µm), MWIR (3-5.0µm) and LWIR (8-14µm).

We specialize in working with new age amorphous materials that can offer comparable performance to Ge based optics at significantly lower price points.

Traditionally crystalline materials such as Ge, ZnS, ZnSe and Si, which can be diamond turned and conventionally ground and polished were being used for optics. We design and build lenses with these materials and also have experience using amorphous materials (Group 16 - Sulfur, selenium and tellurium)